PLEASE NOTE: This item is Not refundable/returnable
Samsungs unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of todays conventional planar V-NAND architecture. 3D V-NAND stacks 32 cell layers vertically over one another rather than decreasing cell dimensions and trying to fit itself onto a fixed horizontal space. As a result, the technology provides higher density and better performance utilising a smaller footprint.
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